发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in connection reliability in a terminal. <P>SOLUTION: The semiconductor device manufacturing method comprises a step of forming terminals 12 protruding from the surface of first conductive foil 10 by etching the first conductive foil 10 except places serving as the terminals 12; a step of overlapping a resin sheet 14 on the first conductive foil 10 for the terminals 12 buried therein; a step of constructing a laminate sheet 18 by overlapping second conductive foil 16 on the resin sheet 14 with a resin layer 15 underlaid; a step of forming a conductive pattern 17 by etching the second conductive foil 16; a step of electrically connecting the conductive pattern 17 and the terminals 12; a step of electrically isolating the terminals 12 from one another; a step of electrically connecting a semiconductor element 22, and the conductive pattern 17 by firmly fixing the semiconductor element 22 to the sheet 18; and a step of forming a sealing resin 24 on the surface of the laminate sheet 18 for the semiconductor element 22 to be coated therewith. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005005545(A) |
申请公布日期 |
2005.01.06 |
申请号 |
JP20030168581 |
申请日期 |
2003.06.13 |
申请人 |
SANYO ELECTRIC CO LTD;KANTO SANYO SEMICONDUCTORS CO LTD |
发明人 |
MITA KIYOSHI |
分类号 |
H01L23/12;H01L21/48;H01L21/50;H01L23/31;H01L23/498 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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