| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for the use of an exposure light source at ≤200 nm, in particular, for F<SB>2</SB>excimer laser light (at 157 nm), and specifically, to provide a positive resist composition showing sufficient transmitting property when a light source at 157 nm is used and having high limit resolution and decreased scum and development defects. <P>SOLUTION: The positive resist composition comprises: (A) a resin which has at least one group decomposed by the effect of an acid to produce an alkali soluble group and which is decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; and (B) a compound which generates an acid by irradiation of active rays or radiation. At least one kind of the group in the resin (A), the group to be decomposed by the effect of acid to produce an alkali-soluble group, has a specified group containing a fluorine atom in the group which leaves during decomposition by the effect of the acid and generation of the alkali-soluble group. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
