| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor power module whose further miniaturization is improved. <P>SOLUTION: A P side collector electrode board 4, a relay electrode board 14 and an N side collector electrode board 9 are bonded on the surface of a substrate 1. A P side IGBT 2a is bonded to the surface of the P side collector electrode board 4. A P side connecting electric conductor 7a is arranged across an emitter electrode 5a of the P side IGBT2a and the N side collector electrode board 9. A P side SiC diode 1a is arranged on the P side connecting electric conductor 7a. A P side cathode connecting electric conductor 6a for connecting the cathode electrode of the P side SiC diode 1a and the P side collector electrode board 4 is arranged. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
