| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage capable of increasing an operational speed. <P>SOLUTION: A level shift circuit 30 comprises second and third MOS transistors 42, 43 each having one end of a current path electrically connected to a power supply potential; a fourth MOS transistor 40, where an input signal related to an address signal is inputted to a gate, one end of the current path is connected to the other end of the current path of the second MOS transistor 42 and the gate of the third MOS transistor 43, and the other of the current path is connected to the ground potential; a fifth MOS transistor 41, where an inverting input signal is inputted to the gate, one end of the current path is connected to the other end of the current path of the third MOS transistor 43, the gate of the second MOS transistor 42, and a first word line, and the other end of the current path is connected to the ground potential; and first switch elements 44, 45 for controlling the supply of the power supply potential to the second and third MOS transistors in response to the input signal. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
