| 摘要 |
PROBLEM TO BE SOLVED: To decrease development defects and to make the thickness of a hardened coating layer formed on a resist pattern small even when baking temperature is increased, and to make the thickness of the the coating layer into almost constant without depending on the baking temperature, in a method for effectively reducing the scale of a resist pattern by using a material for forming a finer pattern. SOLUTION: The method for reducing the scale of a pattern includes the processes of: forming a resist pattern 3 consisting of a chemically amplified photoresist on a 6-inch or greater substrate 1; applying a material for forming a fine pattern containing a water-soluble resin, a water-soluble crosslinking agent and water or a mixture solvent of water and a water-soluble organic solvent on the pattern 3 to form a coating layer 4; baking the chemically amplified photoresist pattern and the coating layer; and developing the coating layer after baking. In the above method, the pattern with a reduced scale is formed by using a water-soluble resin showing the peak temperature of the heat of fusion in the DSC curve which is higher than the baking temperature in the baking process and exceeds 130°C as the material for forming a fine pattern. COPYRIGHT: (C)2005,JPO&NCIPI |
