| 摘要 |
PROBLEM TO BE SOLVED: To surely detect an end point of machining in machining a layer to be processed with the use of a mask layer formed on the layer to be processed. SOLUTION: By irradiating a light to a silicon oxide film 105A and a polysilicon film 104, an interference light formed by a reflecting light from the respective films is measured. Subsequently, a ratio of a strength of an interference light having a wavelength of 600 nm to an integration value of the strength of the interference light in a wavelength region of 400 nm to 800 nm is obtained. This can remove an interference component generated by the silicon oxide film 105A according to a waveform of a measured interference light to be able to calculate a waveform of the interference light generated by the polysilicon film 104. At the end, a remaining thickness of the polysilicon film 104 is obtained on the basis of the waveform of the calculated interference light, and an end point for machining the polysilicon film 104 is detected by comparing the remaining thickness with the intended thickness. COPYRIGHT: (C)2005,JPO&NCIPI
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