发明名称 |
Etching method and plasma processing method |
摘要 |
A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.
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申请公布号 |
US2005000939(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20040902893 |
申请日期 |
2004.08.02 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HAGIHARA MASAAKI;INAZAWA KOICHIRO;NAITO WAKAKO |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;H01L21/768;H05H1/46;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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