摘要 |
A capacitor uses niobium pentoxide in the manufacture of a semiconductor device. The niobium pentoxide has a low crystallization temperature of 600° C. that provides control over the oxidation of the bottom electrode during heat-treatment. A dielectric constituent present as an amorphous oxide along the grain boundaries of polycrystalline niobium pentoxide is used for a capacitor insulator., thereby providing a method to decrease the leakage current along the grain boundary of niobium pentoxide and to realize a high dielectric constant and low-temperature crystallization.
|