CRYSTALLIZATION METHOD FOR POLYSILICON TFT FOR IMPROVING PROPERTIES OF SEMICONDUCTOR LAYER AND APPARATUS FOR PLANARIZING CRYSTALLIZED POLYSILICON LAYER

摘要

PURPOSE: A crystallization method for a polysilicon TFT(Thin Film Transistor) and an apparatus for planarizing a crystallized polysilicon layer are provided to improve properties of a semiconductor layer by removing protruded grains from the crystallized polysilicon layer. CONSTITUTION: A substrate with a polycrystalline silicon layer is loaded(S501). The substrate is aligned(S502). Protruded grains are removed from the substrate(S503). The substrate is cleaned(S504). The substrate is overturned(S505). The overturned substrate is uploaded(S506).