FINFET AND METHOD FOR FORMING FIN OF FINFET TO IMPROVE ON-OFF CHARACTERISTIC AND ELECTRICAL CHARACTERISTIC

摘要

PURPOSE: A method for forming a fin of a FINFET(fin field effect transistor) is provided to improve an on-off characteristic and an electrical characteristic by making the inside of the fin have a uniform doping distribution of impurities and by reducing a variation of a threshold voltage and a subthreshold swing. CONSTITUTION: A silicon substrate(100) is prepared. An isolation layer is formed on the silicon substrate to define an active region. The active region is recessed. An in-situ doped silicon epitaxial layer is grown on the recessed active region. The isolation layer is recessed. The in-situ doped silicon epitaxial layer is trimmed. A conductive layer is formed on the silicon substrate.