| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a read-only semiconductor memory that can suppress the increase of manufacturing cost and can shorten the period required for correction. <P>SOLUTION: The semiconductor integrated circuit device is provided with transistors Tr using gates as word lines, interlayer insulating films 5 and 9, and stopper layers 11 which are provided selectively on the insulating films 5 and 9 positioned above one ends of the current passages of the transistors Tr in accordance with programmed information and contains a material which is different from that of the insulating films 5 and 9. The circuit device is also provided with conductive layers 12 which are selectively provided in the insulating films 5 and 9 in accordance with the presence/absence of the stopper layers 11 and connected to one ends of the current passages of the transistors Tr, and bit lines BL provided on the insulating films 5 and 9, conductive layers 12, and stopper layers 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
