发明名称 PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a process for producing a semiconductor substrate by removing part of a substrate to be processed having a tapered circumferential edge part projecting radially outward in which a produced substrate can be handled without causing any chipping and damage at the circumferential edge part can be reduced. SOLUTION: At step a2, circumferential edge part of a substrate to be processed is removed from one surface side toward the other surface side. It is removed less than one half of the thickness T of the substrate to be processed and more than the thickness T1 of a circuit forming layer in a circuit forming region. At step a3, the substrate to be processed is removed from the other surface side toward the one surface side. It is removed from the circuit forming layer to the other surface side until a predetermined thickness T2 is reached. Since circumferential edge part of a tapered semiconductor substrate projecting radially outward is removed entirely, the circumferential edge part is prevented from projecting sharply outward in the radially direction and protected against chipping or cracking during handling. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005005447(A) 申请公布日期 2005.01.06
申请号 JP20030166539 申请日期 2003.06.11
申请人 SHARP CORP 发明人 KITAOKA KOKI;OGAWA MASASHI
分类号 H01L21/306;H01L21/02;H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/306
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