| 发明名称 |
Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor |
| 摘要 |
In a method of fabricating an integrated silicon-germanium heterobipolar transistor a silicon dioxide layer arranged between a silicon-germanium base layer and a silicon emitter layer is formed by means of Rapid Thermal Processing (RTP) to ensure enhanced component properties of the integrated silicon-germanium heterobipolar transistor.
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| 申请公布号 |
US2005001236(A1) |
申请公布日期 |
2005.01.06 |
| 申请号 |
US20040824745 |
申请日期 |
2004.04.15 |
| 申请人 |
HAEUSLER ALFRED;STEINMANN PHILIPP;BALSTER SCOTT;EL-KAREH BADIH |
发明人 |
HAEUSLER ALFRED;STEINMANN PHILIPP;BALSTER SCOTT;EL-KAREH BADIH |
| 分类号 |
H01L21/331;H01L21/8222;H01L29/737;H01L31/0328;(IPC1-7):H01L31/032;H01L21/822 |
主分类号 |
H01L21/331 |
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