METHOD FOR FABRICATING PASSIVATION LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE ELECTRICAL STABILITY AND RELIABILITY

摘要

PURPOSE: A method for fabricating a passivation layer of a semiconductor device is provided to improve electrical stability and reliability by recovering an inner structure damaged by a plasma etch process. CONSTITUTION: A structure composed of a semiconductor device, multilayered metal interconnections(110,114) and multilayered interlayer dielectrics(112,116) is formed on a semiconductor substrate(100). At least one passivation layer(118) is formed on the structure. The passivation layer and the multilayered interlayer dielectrics except the upper part and the side surface of the metal interconnections are selectively etched to form an opening part. An annealing process is performed in an atmosphere of nitrogen gas and hydrogen gas on the structure including the semiconductor device through the opening of the passivation layer and the multilayered interlayer dielectrics.