| 摘要 |
PURPOSE: A method for fabricating a single electron device is provided to guarantee reliability and mass-productivity by forming a quantum dot through a conventional silicide formation technique. CONSTITUTION: A silicon oxide layer(2) is formed as a tunnel oxide layer on a silicon substrate(1). The first silicon nitride layer(3) for preventing oxidation is deposited on the silicon oxide layer. A metal layer and a silicon layer are sequentially formed on the first silicon nitride layer. The second silicon nitride layer(6) is formed on the silicon layer. While an oxide layer is deposited on the second silicon nitride layer, the metal layer is reacted with the silicon layer to form silicide(10). A heat treatment is performed on the resultant structure to form a quantum dot(11) in the silicide through agglomeration of silicide.
|
