| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a resist pattern profile obtained by an immersion lithography. <P>SOLUTION: After forming a resist film 101 comprising a chemical amplifying type resist material, a pattern exposure is conducted by selectively irradiating an exposing light 104 to a resist film 102 with a solution 103 supplied on the resist film 102 with its per fluoro polyether added by water and temporarily retained in a solution retaining part as circulating. After applying a post baking to the resist film 102 which is pattern exposured, the film 102 is developed by an alkaline developing solution to be able to obtain a resist pattern 105 comprising an unexposed part 102b of the resist film 102 and having a satisfactory shape. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
