| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MIS transistor in which increase of element area is suppressed, width of a channel is increased and electrical characteristics of the channel are not deteriorated. <P>SOLUTION: The MIS transistor being fabricated in a semiconductor substrate (702) comprises the semiconductor substrate (702) constituting a protrusion (704) having at least two different crystal faces on the surface for the major surface, a gate insulating film (708) covering the at least two different crystal faces constituting the surface of the protrusion at least partially, a gate electrode (706) formed, respectively, for the at least two different crystal faces constituting the surface of the protrusion through the gate insulating film, and identical conductivity type diffusion regions (710a, 710b) formed in the protrusion while facing the at least two different crystal faces, respectively, on the opposite sides of the gate electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
