发明名称 PATTERN DRAWING APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an apparatus for obtaining higher resolution than prior art in a pattern drawing apparatus using a mirror device. <P>SOLUTION: In the pattern drawing apparatus, a laser beam L1 becomes a laser beam L2 which advances while being contracted after the laser beam L1 is passed through a microlens array 4, and is imparted to a pinhole plate 5. The pinhole plate 5 uses a quartz plate 10 as a substrate, and has a reflecting film 8 attached to an upper surface, and a shifter 9 attached to a lower surface. Although holes are opened in the reflecting film 8 and the shifter 9, the hole of the shifter 9 is smaller than that of the reflecting film 8. As a result, only the periphery of the beam in the laser beam L3 advancing from the hole of the reflecting film 8 downward is passed through the shifter 9. Therefore, in the laser beam L3, only the periphery of the beam is shifted in phase as compared with the center. In this constitution, since a process constant in a contraction projection optical system can be reduced to 0.3-0.4, resolution performance can be raised as compared with the prior art, and the fine pattern with a line width of 150 nm or less can be drawn. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005005307(A) 申请公布日期 2005.01.06
申请号 JP20030163851 申请日期 2003.06.09
申请人 OMI TADAHIRO;BALL SEMICONDUCTOR INC 发明人 OMI TADAHIRO;SUGAWA SHIGETOSHI;YANAGIDA KIMIO;TAKEHISA KIWAMU
分类号 G03F1/52;G03F1/68;G03F1/76;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/52
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