| 摘要 |
PROBLEM TO BE SOLVED: To modify an MOCVD apparatus so that the uniformity of temperature distribution in the apparatus is improved and the life of a heater can be extended by a simple and low-cost method, and productivity can be improved even if the size of the apparatus is increased, and also to provide a method of growing a semiconductor crystal film. SOLUTION: A semiconductor epitaxial growth system comprises the MOCVD apparatus equipped with a susceptor (5) mounted with a wafer carrier (6) which is rotated with a plurality of wafers (7) placed on a heating device which is composed of a plurality of heat shield plates (3) and a heater (4) and blows out material gas from an upper part. In the MOCVD apparatus, a lateral heat shield ring (9) formed of hexagonal boron nitride (HBN) of insulating quality is formed in the vicinity of the heater around the heater (4) of the heating device and around the heat shield plates (3). The semiconductor crystal film is grown using the semiconductor epitaxial growth system. COPYRIGHT: (C)2005,JPO&NCIPI
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