A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
申请公布号
WO2005001492(A1)
申请公布日期
2005.01.06
申请号
WO2004US18159
申请日期
2004.06.07
申请人
APPLIED MATERIALS ISRAEL, LTD.;APPLIED MATERIALS, INC.;KADYSHEVITCH, ALEXANDER;SHUR, DMITRY;TALBOT, CHRISTOPHER
发明人
KADYSHEVITCH, ALEXANDER;SHUR, DMITRY;TALBOT, CHRISTOPHER