FIELD EFFECT TRANSISTOR

摘要

An organic FET (1) is disclosed which comprises a gate insulating film (41) and a modifying layer (43) sequentially formed on a substrate (2) in this order, a source electrode (6) and a drain electrode (8) formed on the modifying layer (43) at a certain distance from each other, and an organic semiconductor layer (10) formed on top of and between the electrodes (6, 8). The modifying layer (43), which is fixed on the gate insulating film (41) and covered with the organic semiconductor layer (10), contains a specific cyano group-containing compound or is composed only of a specific cyano group-containing compound.