发明名称 |
IMMERSION PHOTOLITHOGRAPHY SYSTEM AND METHOD USING INVERTED WAFER PROJECTION OPTICAL INTERFACE TO SIMPLY CONFINE LIQUID AND REDUCE OR COMPLETELY REMOVE LEAKAGE OF LIQUID |
摘要 |
<p>PURPOSE: An immersion photolithography system using an inverted wafer projection optical interface is provided to simply confine liquid and reduce or completely remove a leakage of liquid by including an exposure system and a liquid supply system. CONSTITUTION: An exposure system exposes electromagnetic radiation to a substrate, including a projection optical system(100) for focusing the electromagnetic radiation on the substrate. A liquid supply system supplies liquid to a gap between the projection optical system and the substrate. The projection optical system is located right under the substrate. The liquid supply system is adjusted to form a liquid meniscus(108) over the projection optical system.</p> |
申请公布号 |
KR20050001445(A) |
申请公布日期 |
2005.01.06 |
申请号 |
KR20040048066 |
申请日期 |
2004.06.25 |
申请人 |
ASML HOLDING N.V. |
发明人 |
SEWELL, HARRY |
分类号 |
G02B13/14;G03B27/42;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G02B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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