发明名称 IMMERSION PHOTOLITHOGRAPHY SYSTEM AND METHOD USING INVERTED WAFER PROJECTION OPTICAL INTERFACE TO SIMPLY CONFINE LIQUID AND REDUCE OR COMPLETELY REMOVE LEAKAGE OF LIQUID
摘要 <p>PURPOSE: An immersion photolithography system using an inverted wafer projection optical interface is provided to simply confine liquid and reduce or completely remove a leakage of liquid by including an exposure system and a liquid supply system. CONSTITUTION: An exposure system exposes electromagnetic radiation to a substrate, including a projection optical system(100) for focusing the electromagnetic radiation on the substrate. A liquid supply system supplies liquid to a gap between the projection optical system and the substrate. The projection optical system is located right under the substrate. The liquid supply system is adjusted to form a liquid meniscus(108) over the projection optical system.</p>
申请公布号 KR20050001445(A) 申请公布日期 2005.01.06
申请号 KR20040048066 申请日期 2004.06.25
申请人 ASML HOLDING N.V. 发明人 SEWELL, HARRY
分类号 G02B13/14;G03B27/42;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G02B13/14
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