| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can simultaneously achieve a low on-resistance and a high breakdown voltage. <P>SOLUTION: This semiconductor device is provided with a first-conductivity high-resistance semiconductor layer formed on the first principal surface of a semiconductor substrate, a second-conductivity first semiconductor region provided on the surface of the high-resistance semiconductor layer in a state where the region is faced to the substrate, and first-conductivity second semiconductor regions formed on the surface of the high-resistance semiconductor layer to hold the first semiconductor region in between and having shallower depths than the first semiconductor region has. This device is also provided with a second-conductivity embedded region having an embedded section provided with a notched section in a region held between the first semiconductor region and semiconductor substrate, and a contact section led out to the surface of the high-resistance semiconductor layer in the high-resistance semiconductor layer provided between the first and second semiconductor regions and semiconductor substrate. The current path between the second semiconductor region and semiconductor substrate is formed in the high-resistance semiconductor layer through the notched section of the embedded region. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
