| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with electrode terminals that are formed finer as the degree of integration of a circuit increases and can be prevented from being formed in defective forms or from causing malfunctions, such as the short circuit, breaking, etc. <P>SOLUTION: In a semiconductor chip 21 provided with an element substrate 22, an integrated circuit 23 formed on the top surface of the substrate 22, and electrode terminals 24 for outside connection extended toward the ends of the substrate 22 from the integrated circuit 23, the electrode terminals 24 are formed at narrow pitches in a plane on the surfaces of the ends of the substrate 22. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
