发明名称 GATE DRIVE CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a gate drive circuit that can stabilize a gate drive voltage of a semiconductor device. SOLUTION: A step-up power supply circuit 11 is connected and arranged between a power terminal 4a of a gate drive IC 4 and a battery 1. When a voltage of the battery 1 drops, the gate drive voltage is secured stably by increasing the voltage up to a set point by the step-up power supply circuit 11, and by supplying its output voltage to the gate drive IC 4 side. A first diode is provided that is arranged and connected between the step-up power supply circuit and the power terminal provided at the gate drive IC side, and a second diode between the gate drive IC and the battery, so that a voltage can be supplied to the power terminal via the first or second diode. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005006467(A) 申请公布日期 2005.01.06
申请号 JP20030169772 申请日期 2003.06.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 GOTO SHIGETADA;ASAI TAKAKIMI
分类号 H02M1/08;(IPC1-7):H02M1/08 主分类号 H02M1/08
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