| 摘要 |
PROBLEM TO BE SOLVED: To provide a low noise amplifier capable of suppressing noise with a small number of components and of amplifying a signal with a high gain, and further to provide a low noise amplifier with a CMOS structure capable of lowering noise and signal distortion. SOLUTION: This low noise amplifier has a semiconductor substrate (810A and 810) having at least two crystalline planes and a gate insulating film (820A) formed on the semiconductor substrate to at least two crystalline planes, wherein the channel width of channels respectively formed in the semiconductor substrate along the gate insulating film is shown by the total sum of respective channel width of the channels respectively formed to at least two crystalline planes. The low noise amplifier uses a CMOS transistor (800) obtained by combining a p channel MOS transistor (840A) and an n channel MOS transistor (840B) to suppress noise to a low level, amplifying an input signal. COPYRIGHT: (C)2005,JPO&NCIPI
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