| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth method for a silicon carbide single crystal which method hardly causes micropipe defects and improves the crystal growth rate. SOLUTION: The epitaxial growth method for forming an epitaxial layer 20 of a silicon carbide single crystal on a seed crystal substrate 10 comprises a first step of laminating silicon 12 on the seed crystal substrate 10 to form a laminate 14, a second step of covering the laminate 14 with a silicon carbide covering layer 16 to form a composite 18, and a third step of heat treating the composite 18 at 2,000°C or higher, i.e. at a temperature sufficiently higher than the melting point of silicon 12. Preferably, the silicon carbide covering layer 16 for covering the laminate 14 is a silicon carbide polycrystal film formed by a CVD method. COPYRIGHT: (C)2005,JPO&NCIPI
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