PROCESS FOR PRODUCING SINGLE CRYSTAL AND SINGLE CRYSTAL

摘要

A process for producing a single crystal by pulling up a single crystal from a raw material melt according to the CZ technique, wherein providing that at the stage of growth of single crystal, V represents the pull up rate, Gc the temperature gradient at crystal center and Ge the temperature gradient at crystal periphery, the temperature gradient at crystal center Gc and temperature gradient at crystal periphery Ge are controlled by altering the spacing between the surface of the raw material melt and a heat shield member disposed opposite to the raw material melt surface so that the difference (DeltaG) between the temperature gradient at crystal center Gc and the temperature gradient at crystal periphery Ge is 0.5°C/mm or less, and wherein the ratio (V/Gc) of pull up rate V to temperature gradient at crystal center Gc is controlled so that a single crystal with desired defect region can be grown. Thus, there is provided a process for producing a single crystal in which a single crystal with desired defect region over the entire surface of crystal diameter direction throughout the direction of crystal growth axis can be efficiently produced within a short period of time with high yield by controlling V/G without lowering the pull up rate V at the stage of growth of single crystal according to the CZ technique.