| 摘要 |
PURPOSE: A method for fabricating a polysilicon LCD is provided to reduce the number of process steps by selectively forming an amorphous polysilicon layer using a shadow mask, forming a silicon oxide layer on the polysilicon layer, and etching the silicon oxide layer. CONSTITUTION: A method for fabricating a polysilicon LCD includes preparing a substrate(301), sequentially forming a polysilicon layer, a gate insulating film(304), and a gate metal layer on the substrate, forming a gate photoresist pattern(306), forming a gate electrode(305a), patterning the gate insulating film and the polysilicon layer, partially removing the photoresist pattern, implanting impurity ions into the patterned polysilicon layer, partially removing the pattern gate insulating film, forming source/drain electrodes on the patterned polysilicon layer, forming a passivation layer on the source/drain electrodes, and forming a pixel electrode on the passivation layer. |
