| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to guarantee a sufficient opening part while preventing an underlying insulation layer from being attached in a wet etch process. CONSTITUTION: The first insulation layer(12) is formed on a substrate(10). A plug(15) passes through the first insulation layer to be in contact with the substrate. The second insulation layer(16) is formed on the front surface including the plug. A conductive layer(20) and an insulation layer for a hard mask(21) are sequentially formed on the second insulation layer. The insulation layer for the hard mask and the conductive layer are selectively etched to form a conductive layer pattern of a structure composed of the hard mask and the conductive layer. The second insulation layer is selectively etched by substantially the same critical dimension as the conductive layer pattern. A spacer(22) is formed to surround the side surface of the conductive layer pattern and the etched second insulation layer. The third insulation layer(23) is formed on the resultant structure including the spacer. By dry and wet etch processes, the third insulation layer is selectively etched to form a contact hole exposing the plug.
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