| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of controlling a resist pattern finely when forming the resist pattern by a thermal flow with the use of a conventional resist material and device. <P>SOLUTION: The resist pattern forming method comprises the steps of forming a resist film on a substrate, exposing the resist film so as to form a pattern, developing the resist film, applying radiation to the whole surface or part of the surface of the resist pattern after developed, and baking the resist pattern after the radiation irradiation to vary a size of the pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
