发明名称 OXIDE DIELECTRIC AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an oxide dielectric having high Q value, high dielectric constant and excellent stability to temperature by reducing the quantity of impurity in a TiO<SB>2</SB>-ZrO<SB>2</SB>-SnO<SB>2</SB>-based oxide dielectric, and a method of manufacturing the oxide dielectric at a low cost. <P>SOLUTION: The oxide dielectric is obtained by heating a solution containing nitrates of zirconium, titanium and tin and an amino acid to prepare TiO<SB>2</SB>-ZrO<SB>2</SB>-SnO<SB>2</SB>-based oxide powder and sintering it. The oxide is obtained as fine powder having high purity, high homogeneity and narrow grain size distribution by the method in which the raw materials are relatively easily highly purified and the oxide is formed by a homogeneous reaction in the solution. Then, the oxide dielectric obtained by sintering the oxide powder exhibits excellent characteristics. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005001927(A) 申请公布日期 2005.01.06
申请号 JP20030166277 申请日期 2003.06.11
申请人 NEC TOKIN CORP 发明人 MATSUZAWA HIDEKI;TANAKA KAZUMI
分类号 C04B35/49;H01B3/12;H01G4/12 主分类号 C04B35/49
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