发明名称 LAMINATING SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a laminating substrate which can be laminated by reducing voids generated on an outer periphery and bringing a centerlines of large and small wafers into coincidence with an orientation flat part or a notched part, which can reduce the voids of the outer periphery, and which can enlarge an effective area of an active layer which can form a device, and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the laminating substrate includes positioning a wafer 11 for a small-diameter supporting substrate to a wafer 12 for a large-diameter active layer by first pressing a pushing board 35 against the orientation flat part 12a, and moving the wafer 12 substantially horizontally. Subsequently, the method includes also a step of pushing the pushing board 35 to the orientation flat part 11a and integrally moving both the wafers 11, 12. Thus, cutouts 12b, 12b for aligning are pushed to aligning boards 33, 34. As a result, the large and small wafers 11, 12 can be laminated in the state that the centerlines are brought into coincidence with the orientation flat parts 11a, 12a. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005005318(A) 申请公布日期 2005.01.06
申请号 JP20030164006 申请日期 2003.06.09
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 TOMITA SHINICHI
分类号 H01L21/68;G11C29/00;H01L21/02;H01L21/762;H01L23/544;(IPC1-7):H01L21/02 主分类号 H01L21/68
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