| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a film which protects a semiconductor device against water and reduces reflection of incident light. <P>SOLUTION: An SiNx:H layer is formed on a semiconductor substrate by PECVD method comprising a step for placing a substrate (1) in a processing chamber (5) having specified dimensions of internal processing chamber, e.g. at least one internal length, internal width, internal height and/or inside diameter, a step for sustaining the pressure in the processing chamber at a relatively low level, a step for sustaining the processing temperature of the substrate (1) at a specified level, a step for generating plasma (P) from at least on plasma sustention source (3) fixed to the processing chamber (5) while spaced apart by a specified distance (L) from the surface of the substrate, a step for touching at least a part of the plasma (P) generated from the plasma sustention source (3) to the surface of the substrate, and a step for supplying a flow of cyan and ammonia to a part of the plasma (P). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
