| 发明名称 |
Method of fabricating semiconductor side wall fin |
| 摘要 |
A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.
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| 申请公布号 |
US2005001216(A1) |
申请公布日期 |
2005.01.06 |
| 申请号 |
US20040867772 |
申请日期 |
2004.06.16 |
| 申请人 |
ADKISSON JAMES W.;AGNELLO PAUL D.;BALLANTINE ARNE W.;DIVAKARUNI RAMA;JONES ERIN C.;NOWAK EDWARD J.;RANKIN JED H. |
发明人 |
ADKISSON JAMES W.;AGNELLO PAUL D.;BALLANTINE ARNE W.;DIVAKARUNI RAMA;JONES ERIN C.;NOWAK EDWARD J.;RANKIN JED H. |
| 分类号 |
H01L29/161;H01L21/336;H01L21/8234;H01L21/84;H01L27/08;H01L27/088;H01L27/092;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/161 |
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