| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the generation of electromigration is prevented between wiring where a magnetic field is necessary to be produced and a magnetic shield material layer covering the outside of the wiring. <P>SOLUTION: An MRAM uses a tunnel magnetic resistor (TMR) and a MOS-FET as a memory and its wiring is formed by crossing a word line and a bit line with the TMR in between. The TMR is programmed by means of a magnetic field produced by a current flowing in the lines. The outer surface of a wiring layer with the word line and the bit line is covered with a magnetic shield material layer except for a surface on the side of the TMR. A high-melting-point material layer is inserted between the wiring layer and the magnetic shield material layer, or a high-melting-point material layer is further provided on the outside of the magnetic shield material layer, thereby improving the migration resistance of the wiring layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
