SELF-SUPPORTING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-quality self-supporting GaN substrate improved in electrical properties and to provide a method for producing a self-supporting substrate capable of being produced by laminating a plurality of such self-supporting substrates on at least one seed substrate. SOLUTION: The self-supporting substrate 1 comprises a thick GaN film and is characterized in that the depth profile of a dislocation density as measured from one face 1a and that of a dislocation density as measured from the other face 1b are substantially identical with each other. The method for producing the self-supporting substrate essentially consists of the step D of forming an intermediate layer comprising a thin ZnO film and a thick GaN film on the intermediate layer on a flat substrate comprising GaN in the given order a plurality of times and the step E of removing the plurality of intermediate layers and separating the substrate from the plurality of thick GaN films. COPYRIGHT: (C)2005,JPO&NCIPI