| 发明名称 |
DC AMPLIFIER AND ITS SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
PROBLEM TO BE SOLVED: To realize a high gain DC amplifier and to reduce distortion of a signal in the DC amplifier. SOLUTION: A rectangular parallelepiped protrusion 21 having height H<SB>B</SB>and width W<SB>B</SB>is formed on a silicon substrate 22 and a gate oxide film 28 is formed partially on the top surface and the side wall face of the protrusion 21. A source 31 and a drain 32 are formed on the opposite sides of a gate electrode 26 thus fabricating an MOS transistor. A DC amplifier is constituted of the MOS transistor. The DC amplifier has a differential amplifier circuit comprising the MOS transistor. COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2005005621(A) |
申请公布日期 |
2005.01.06 |
| 申请号 |
JP20030170104 |
申请日期 |
2003.06.13 |
| 申请人 |
TOYOTA INDUSTRIES CORP;NIIGATA SEIMITSU KK;OMI TADAHIRO |
发明人 |
NISHIMUTA TAKESHI;MIYAGI HIROSHI;OMI TADAHIRO;SUGAWA SHIGETOSHI;TERAMOTO AKINOBU |
| 分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L29/78;H01L29/786;H03F3/343;H03F3/45;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
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