| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer heating apparatus which can be used in a temperature range higher than about 1,200°C, have a good thermal efficiency, rapidly increase or decrease the temperature, increase the processing efficiency of a single semiconductor wafer, eliminate the possibility of becoming a contamination source to the semiconductor wafer, have an excellent uniform in-plane temperature for the semiconductor wafer, and have a good film formation property and an excellent durability. SOLUTION: A microwave transmitting window 12 is provided in a bottom 11a of a chamber 11, a susceptor 17 made of a ceramic containing at least one selected from the group consisting of B, Al, Si, Ge, As, Sb, and Te for carrying a semiconductor wafer W on its upper surface 17a is provided in the chamber 11, and a microwave generator 21 for applying microwave to the susceptor 17 via the microwave transmitting window 12 is provided outside the window 12. COPYRIGHT: (C)2005,JPO&NCIPI
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