| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide film to desired regions with different thickness without the need for a process. SOLUTION: A plurality of grooves 107, 108 with at least two kinds of depths are formed to a silicon substrate 103. The silicon substrate 103 is oxidized until the regions between the grooves 107, 108 of the silicon substrate 103 become the oxide film 109, and the inside of the grooves 107, 108 is buried with the oxide film 109. COPYRIGHT: (C)2005,JPO&NCIPI
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