| 摘要 |
PROBLEM TO BE SOLVED: To monitor a film thickness during a film forming improving a measuring accuracy. SOLUTION: A method for forming a film comprises the steps of vertically setting up a monitoring wafer M to hooks 7a, 7b provided on a periphery surface of a wafer boat 5, entering a laser beam to the monitoring wafer M by a controlling part 11, calculating a film thickness of an oxide film formed on the monitoring wafer M on the basis of interference information of the laser beam sent from beam receiving parts 10a, 10b, closing a valve V1 and opening a valve V2 to spurt a purge gas G2 into a quartz tube 2 through a gas introduction tube 3 when the film thickness of the oxide film formed on the monitoring wafer M reaches a predetermined value to stop the film forming process of the wafer W. COPYRIGHT: (C)2005,JPO&NCIPI
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