| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate by which the occurrence of defective products due to particles, damages, etc. attributable to a susceptor can be reduced. SOLUTION: After heat treatment, a silicon oxide film 14 on the rear face of an SIMOX substrate 10 is removed and the silicon surface of an exposed bulk layer 13 is ground by a prescribed quantity, resulting in removal of particles, damages, etc. existing on the rear face of the SIMOX substrate 10 which are attributable to the susceptor. Consequently, the likelihood of defective SIMOX substrates 10 and that of defective devices fabricated on the surface of the SIMOX substrate 10 can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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