| 摘要 |
PROBLEM TO BE SOLVED: To control the threshold voltage of a field effect transistor while suppressing increase in the number of fabrication steps. SOLUTION: Using ion implantation N for forming the source/drain of an N channel field effect transistor, an over impurity introduction layer 10 is formed in a polysilicon gate 5 and N type impurities contained in the over impurity introduction layer 10 are diffused in the direction of an active region 7 in the polysilicon gate 5. COPYRIGHT: (C)2005,JPO&NCIPI
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