发明名称 Method for producing an antifuse in a substrate and an antifuse structure for integration in a substrate
摘要 Method for producing an antifuse in a substrate, a first interconnect being applied to the substrate, a dielectric layer being applied at an end face of the first interconnect, which end face essentially runs vertically with respect to the substrate, a second interconnect being applied in such a way that it adjoins the dielectric layer with an end face, with the result that an antifuse structure is formed.
申请公布号 US2005003647(A1) 申请公布日期 2005.01.06
申请号 US20030724007 申请日期 2003.11.26
申请人 LINDOLF JURGEN;SCHAMBERGER FLORIAN 发明人 LINDOLF JURGEN;SCHAMBERGER FLORIAN
分类号 H01L23/525;(IPC1-7):H01L21/44;H01L21/326;H01L21/479;H01L21/82 主分类号 H01L23/525
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