发明名称 |
Method for producing an antifuse in a substrate and an antifuse structure for integration in a substrate |
摘要 |
Method for producing an antifuse in a substrate, a first interconnect being applied to the substrate, a dielectric layer being applied at an end face of the first interconnect, which end face essentially runs vertically with respect to the substrate, a second interconnect being applied in such a way that it adjoins the dielectric layer with an end face, with the result that an antifuse structure is formed.
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申请公布号 |
US2005003647(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20030724007 |
申请日期 |
2003.11.26 |
申请人 |
LINDOLF JURGEN;SCHAMBERGER FLORIAN |
发明人 |
LINDOLF JURGEN;SCHAMBERGER FLORIAN |
分类号 |
H01L23/525;(IPC1-7):H01L21/44;H01L21/326;H01L21/479;H01L21/82 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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