| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile field effect transistor wherein the compensation of induced electric charge due to a leakage current is suppressed so as to eliminate a variation in floating electrode potential. SOLUTION: A second capacitor 213 having a paraelectric film is interposed between a floating electrode 205 configuring the gate of the field effect transistor and a third capacitor 214 with a ferroelectric film. The area of the floating electrode 205 and the area of the second capacitor 213 are preferably greater than the area of the third capacitor 214 by twice or more and not more than 60 times, preferably 5 times or more and not more than 30 times. Or the second capacitor with a ferroelectric film may be interposed between the floating electrode configuring the gate of the field effect transistor and the third capacitor with the paraelectric film. COPYRIGHT: (C)2005,JPO&NCIPI
|
