| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device having a stable and high saturation electric charge amount even though an operation temperature fluctuates. SOLUTION: A substrate bias supply circuit 20a uses a MOS transistor resistor 21 and a polysilicon resistor 22 having mutually different temperature characteristics to apply resistive dividing to power supply voltage, thereby calculating substrate bias voltage having a negative temperature characteristic. By applying the calculated substrate bias voltage to an n type semiconductor substrate 11, the fluctuation of a saturation electric charge amount accompanied by temperature fluctuation is prevented so that a blooming phenomenon that easily occurs at a high temperature can be prevented. In addition, by controlling the substrate bias voltage on the basis of the surface temperature of a CCD, the saturation electric charge amount can be controlled more accurately. COPYRIGHT: (C)2005,JPO&NCIPI
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