发明名称 Semiconductor storage device, display device and portable electronic equipment
摘要 A semiconductor storage device includes a memory cell array 21 in which a plurality of memory elements are arranged and a program verify circuit 30. The memory element 1, 33 includes a gate electrode 104 formed on a semiconductor layer 102 via a gate insulator 103, a channel region arranged below the gate electrode 104, diffusion regions 107a, 107b that are located on opposite sides of the channel region and have a conductive type opposite to that of the channel region, and memory function bodies 109 that are located on opposite sides of the gate electrode 104 and have a function of retaining electric charge. A program load register 32 of the program verify circuit 30 eliminates a state that a memory element 33 which has initially been verified as having been correctly programmed needs to be further programmed.
申请公布号 US2005001243(A1) 申请公布日期 2005.01.06
申请号 US20040848260 申请日期 2004.05.19
申请人 YAOI YOSHIFUMI;IWATA HIROSHI;SHIBATA AKIHIDE;MORIKAWA YOSHINAO;NAWAKI MASARU 发明人 YAOI YOSHIFUMI;IWATA HIROSHI;SHIBATA AKIHIDE;MORIKAWA YOSHINAO;NAWAKI MASARU
分类号 G11C16/02;G11C11/56;G11C16/04;G11C16/34;H01L21/28;H01L21/336;H01L21/8234;H01L21/8247;H01L27/088;H01L27/115;H01L29/788;H01L29/792;H01L31/062;(IPC1-7):H01L31/062 主分类号 G11C16/02
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