| 摘要 |
A method of controlling the top width of a deep trench. A conductive layer is formed on the trench over a substrate of polysilicon with a recessed structure. An additional layer of amorphous silicon (alpha-Si) is deposited onto the polysilicon. After subsequent oxidation, the amorphous silicon is converted to SiO2. According to the invention, the top width of a deep trench is controlled, protecting bit lines from sub-threshold leakage.
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