| 摘要 |
The present invention provides a copper compound having a decomposition temperature in a range of 100° C. to 300° C. and including one unit or a plurality of connected units represented by the following Formula (1): [R<1>COO]n[NH3]mCuX<1>p (1) where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R<1 >respectively represent the following Formula (2), CH2X<2>, CH2X<2>(CHX<2>)q, NH2, or H, and may be the same or different from each other, or n is 2 and two pieces of [R<1>COO] represent together the following Formula (3); R<2>, R<3>, and R<4 >are respectively CH2X<2>, CH2X<2>(CHX<2>)q, NH2, or H; R<5 >is -(CHX<2>)r-; X<2 >is H, OH, or NH2; r is 0 to 4; q is 1 to 4; and X<1 >is NH4+, H2O, or solvent molecules According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.
|
