发明名称 |
Semiconductor light-emitting device and method for fabricating the device |
摘要 |
An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al0.5Ga0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.
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申请公布号 |
US2005001222(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20040900212 |
申请日期 |
2004.07.28 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KURAHASHI TAKAHISA;NAKATSU HIROSHI;HOSOBA HIROYUKI;MURAKAMI TETSUROU |
分类号 |
H01L33/06;H01L33/10;H01L33/14;H01L33/16;H01L33/22;H01L33/30;H01L33/38;H01L33/46;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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地址 |
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